Realization of GHz band integrated optical links in a radio frequency Si Ge bipolar process operating at 650 to 850 nm wavelength

A series of on-chip optical links 50-μm length, utilizing 650 to 850 nm propagation wavelength, with Si avalanche-mode sources, silicon nitride-based waveguides, and Ge detectors, have been designed realized, a 0.35-μm SiGe radio frequency bipolar integrated circuit process. The coupling between the source detectors was realized by set dedicated which were all fabricated components All fully on same chip. light-emitting diodes (Si AMLEDs) emitted in 650- 850-nm wavelength regime. Correspondingly, small microdimensioned utilize detector technology detection efficiencies up 0.85 regime transition 20 GHz. Best performances for as show 5 GHz total link budget loss −40 dB. results are presented several interpretations given current realizations. is particularly suitable realization low-cost signal processing, interconnects, various types microsensors.